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Preliminary Data Sheet
MegaMOS FET
N-Channel Enhancement Mode
TM
VDSS IXTH 30N45 IXTH 30N50 450 V 500 V
ID25 30 A 30 A
RDS(on) 0.16 0.17
TO-247 AD
Symbol
Test Conditions 30N45 30N50 30N45 30N50
Maximum Ratings
D (TAB)
VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg TL Md Weight
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C
450 500 450 500 20 30 30 120 360 -55 ... +150 150 -55 ... +150
V V V V V V A A W C C C C
TO-247 SMD
( ...S )
G E
C (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
*Add suffix letter "S" for TO-247 SMD package option (EX:IXTH30N50S)
1.6 mm (0.063 in) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. 6 g
Features
* International standard package * * * *
JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 450 .087 2 -0.25 100 TJ = 25C TJ = 125C 200 3 0.17 0.16 4 V V %/k V %/k nA A mA
Applications
VDSS
VGS = 0 V, ID = 5 mA BVDSS
30N50 30N45 temperature coefficient
* Switch-mode and resonant-mode * Motor control * Uninterruptible Power Supplies (UPS) * DC choppers
Advantages power supplies
VGS(th) I GSS IDSS RDS(on)
VDS = VGS, ID = 250A VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
30N50 30N45 Pulse test, t 300 s, duty cycle d 2 %
* Easy to mount with 1 screw (TO-247) * Space savings * High power density
(isolated mounting screw hole)
(c) 1997 IXYS All rights reserved
94569D(5/97)
IXTH30N45
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 28 5680 635 240 35 42 110 26 227 29 110 0.35 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXTH30N50
TO-247 AD Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test VGS= 0 V, VDS = 25 V, f = 1 MHz
P
VGS= 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 1 , (External)
e
Dim.
VGS= 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25
Source-Drain Diode Symbol IS I SM VSD trr Test Conditions VGS = 0
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 120 1.5 850 A A V ns
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-247 SMD Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V
1. Gate 2. Collector Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S
3. Emitter 4. Collector Inches Min. Max. .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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